{"created":"2023-05-15T11:01:30.537356+00:00","id":422,"links":{},"metadata":{"_buckets":{"deposit":"6128ba7f-9bc6-465b-88c1-6118bb663b63"},"_deposit":{"created_by":2,"id":"422","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"422"},"status":"published"},"_oai":{"id":"oai:nagaokaut.repo.nii.ac.jp:00000422","sets":["5:16:39:45"]},"author_link":["1144","1143","1141","1146","1145","1142"],"item_4_alternative_title_21":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Transient thermoluminescence studies of trap levels of ZnS layers grown on GaAs substrates by vapor-phase epitaxy"}]},"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1984-10-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"20","bibliographicPageStart":"15","bibliographicVolumeNumber":"6","bibliographic_titles":[{"bibliographic_title":"長岡技術科学大学研究報告"}]}]},"item_4_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The trap levels of epitaxial ZnS crystals grown (100) n-Gaas substrates have been studied by transient thermoluminescence method, where the temperature dependence of the photoluminescence decay is analyzed. The samples prepared at a high substrate temperature (~700C), shwing the self-activated emission, have a trap level with an ionization energy of 0.41eV and an electron capture cross-section of 4.2*10^-14 cm^2. The origin of this trap is considered to be ga impurities, contamination from GaAs Substrate. On the other hand, the samples prepared at alow substrate temperature (~600C), exhibiting green- and blue- Cu related emissions, have atrap level with an ionization energy of 0.5eV and a capture cross-section of 1.0*10^-14 cm^2, and two other traps of 0.28 and 0.64eV. However, in this case correspondence to specific impurities is as yet unclear.","subitem_description_type":"Abstract"}]},"item_4_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"1143","nameIdentifierScheme":"WEKO"}],"names":[{"name":"キシモト, セイイチ"}]},{"nameIdentifiers":[{"nameIdentifier":"1144","nameIdentifierScheme":"WEKO"}],"names":[{"name":"イイダ, セイシ"}]},{"nameIdentifiers":[{"nameIdentifier":"1145","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Kishimoto, Seiichi"}]},{"nameIdentifiers":[{"nameIdentifier":"1146","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Iida, Seishi"}]}]},"item_4_publisher_35":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"長岡技術科学大学"}]},"item_4_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00177120","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0388-5631","subitem_source_identifier_type":"ISSN"}]},"item_4_text_4":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"長岡技術科学大学電気系"},{"subitem_text_value":"長岡技術科学大学電気系"}]},"item_4_version_type_18":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"岸本, 誠一"}],"nameIdentifiers":[{"nameIdentifier":"1141","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"飯田, 誠之"}],"nameIdentifiers":[{"nameIdentifier":"1142","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-08-03"}],"displaytype":"detail","filename":"K6_3.pdf","filesize":[{"value":"369.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"K6_3.pdf","url":"https://nagaokaut.repo.nii.ac.jp/record/422/files/K6_3.pdf"},"version_id":"1b2c4d01-a79a-4ffe-82d1-fd92712f9686"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Zinc sulfide","subitem_subject_scheme":"Other"},{"subitem_subject":"vapor-phase epitaxy","subitem_subject_scheme":"Other"},{"subitem_subject":"electron trap","subitem_subject_scheme":"Other"},{"subitem_subject":"capture-cross section","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"過渡熱発光法によるZnS/GaAs気相エピタキシャル層のトラップ準位の測定","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"過渡熱発光法によるZnS/GaAs気相エピタキシャル層のトラップ準位の測定"}]},"item_type_id":"4","owner":"2","path":["45"],"pubdate":{"attribute_name":"公開日","attribute_value":"2011-02-15"},"publish_date":"2011-02-15","publish_status":"0","recid":"422","relation_version_is_last":true,"title":["過渡熱発光法によるZnS/GaAs気相エピタキシャル層のトラップ準位の測定"],"weko_creator_id":"2","weko_shared_id":-1},"updated":"2023-05-15T11:29:19.121005+00:00"}